| PART |
Description |
Maker |
| BTA08-600A |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
| BTA10-600C |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
| IRGBC20F |
600V Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| 1SS269 |
Small packag Small Total capacitance: CT = 1.2pF(Max) Low series resistance: rs = 0.6(Typ.)
|
TY Semiconductor Co., Ltd
|
| IRG4BC30FD1 |
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRF[International Rectifier]
|
| APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
| IRG4BC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
| FS1209BH00TU FS1209DH00TU FS1209MH00TU FS1209NH00T |
12 A, 200 V, SCR, TO-220AB
12 A, 400 V, SCR, TO-220AB
12 A, 600 V, SCR, TO-220AB
12 A, 800 V, SCR, TO-220AB
|
|
| 2N6404-AD 2N6400-BV 2N6403-AF 2N6405-AJ |
16 A, 600 V, SCR, TO-220AB
16 A, 50 V, SCR, TO-220AB
16 A, 400 V, SCR, TO-220AB
16 A, 800 V, SCR, TO-220AB
|
MOTOROLA INC
|
| SUP85N08-08-E3 |
85 A, 75 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
Vishay Intertechnology, Inc.
VISHAY SILICONIX
|
| IRG4BC20F |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) 绝缘栅双极晶体管VCES和\u003d 600V电压的Vce（on）典\u003d 1.66V，@和VGE \u003d 15V的，集成电路\u003d 9.0,9.0
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| MAC212-10-A16A MAC212-8-N MAC212-4-N |
800 V, 12 A, TRIAC, TO-220AB
600 V, 12 A, TRIAC, TO-220AB
200 V, 12 A, TRIAC, TO-220AB
|
MOTOROLA INC
|
|
